Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

نویسندگان

چکیده

We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures large scales, at 400 °C CMOS-compatible temperature. Illustratively, we define multilayer quantum well geometry through successive in situ growths, leading to WSe2 being encapsulated into WS2 layers. The structural constitution is confirmed by Raman spectroscopy combined with transmission electron microscopy. large-scale high homogeneity resulting 2D heterostructure also validated macro- and microscale mappings. illustrate benefit this integrative approach showing preservation even most fragile layers once heterostructure. Finally, fabricate vertical tunneling device based these discuss clear signature electronic transport controlled configuration ab initio calculations support. flexibility direct approach, stacks built single run, allows definition barely accessible usual exfoliation or transfer techniques materials. Reminiscent III–V semiconductors’ successful exploitation, our unlocks virtually infinite combinations material families any design.

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ژورنال

عنوان ژورنال: ACS Nano

سال: 2021

ISSN: ['1936-0851', '1936-086X']

DOI: https://doi.org/10.1021/acsnano.1c00544